reverse v oltage: 40 v olts forward current: 3 amp rohs device features mechanical data ACDBA340-HF - low profile package. - ideal for automated placement. - low forward voltage drop. - high surge capability . - guard ring for overvoltage protection. - case: do-214ac / sma, molded plastic. - polarity: cathode band. - w eight: 0.062 grams(approx.). - t erminals: lead free plating (t in finish). - solderable per mil-std-202, method 208. - epoxy: ul flammability classification rate 94v -0 . halogen free 0 .0 6 5 ( 1 .6 5 ) 0 .0 4 9 ( 1 .2 5 ) 0 .1 1 0 ( 2 .7 9 ) 0 .1 0 0 ( 2 .5 4 ) 0 .1 7 7 ( 4 .5 0 ) 0 .1 5 7 ( 3 .9 9 ) 0 .0 0 8 (0 .2 0 ) 0 .0 0 4 (0 .1 0 ) 0 .0 1 2 ( 0 .3 0 5 ) 0 .0 0 6 ( 0 .1 5 2 ) 0 .2 0 8 ( 5 .2 8 ) 0 .1 9 3 ( 4 .9 0 ) 0 .0 6 0 ( 1 .5 2 ) 0 .0 3 0 ( 0 .7 6 ) 0 .0 9 0 ( 2 .2 9 ) 0 .0 7 8 ( 1 .9 8 ) circuit diagram maximum ratings (at t a =25c unless otherwise noted) electrical characteristics (at t a =25c unless otherwise noted) dc blocking voltage v dc 40 v a verage forward rectified current i f 3 a t yp v rms v rrm rms voltage repetitive peak reverse voltage symbol parameter conditions min max unit v v 28 40 peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 80 a storage temperature range operating temperature range t j +125 c t stg c +150 -55 -55 v r =v rrm, t a =25c symbol t yp parameter conditions min max unit forward voltage v f v i r ma 0.5 i f = 3a 0.55 reverse current thermal resistance junction to case junction to ambient r ja r jc c/w c/w 50 30 junction capacitance f=1mh z and applied 4v dc reverse v oltage c j pf 150 - comply with aec-q101 aqw -jb009 page 1 rev : a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. smd schottky barrier diode do-214ac (sma) dimensions in inches and (millimeter)
aqw -jb009 page 2 rev : a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. smd schottky barrier diode ra ting and characteristic cur ves ( ) ACDBA340-HF a v e r a g e f o r w a r d c u r r e n t , ( a ) case t emperature, (c) p e a k f o r w a r d s u r g e c u r r e n t , ( a ) number of cycles at 60hz fig.4 - t ypical reverse characteristics r e v e r s e l e a k a g e , ( m a ) c u r r e n t 8.3ms single half sine-w ave 0 75 125 0 1.0 5.0 25 50 100 150 0 60 100 10 100 1 40 20 80 fig.2 - maximum non-repetitive forward surge current (jedec method) 0.001 10 1 0.1 100 0.01 30 60 20 40 80 70 50 90 t j =100c t j =25c fig.5 - t ypical junction capacitance j u n c t i o n c a p a c i t a n c e , ( p f ) reverse v oltage, (v) 0.1 1.0 10 100 600 0 800 2.0 3.0 4.0 t j =25c fig.3 - t ypical forward characteristics forward v oltage, (v) i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) 0.3 0.6 0.8 0.4 0.5 0.7 0.9 1.0 0.1 0.01 10 100 percent of peak reverse v oltage, (%) 200 400 fig.1 - t ypical forward current derating curve t j =25c pulse width 300us 1% duty cycle
aqw -jb009 page 3 rev : a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. smd schottky barrier diode reel t aping specification t railer device leader 400mm (min) 160mm (min) ....... ....... ....... ....... ....... ....... ....... ....... end start direction of feed o 1 2 0 d 1 d 2 d w 1 c i n d e x h o l e d e f b w p p 0 p 1 a b c d d d 2 d 1 e f p p 0 p 1 s y m b o l w w 1 ( m m ) ( i n c h ) 0 . 1 1 4 m a x . 0 . 2 3 2 m a x . 0 . 1 0 5 m a x . 0 . 0 5 9 0 . 0 0 4 1 3 . 0 0 0 . 0 7 9 1 . 9 6 9 m i n . 0 . 5 3 1 0 . 0 3 9 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 2 1 7 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 2 0 . 4 7 2 0 . 0 1 2 0 . 7 2 4 m a x . 2 . 9 0 m a x . 5 . 9 0 m a x . 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 5 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 5 0 m i n . 1 3 . 5 0 1 . 0 0 2 . 6 6 m a x . 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 1 2 . 0 0 0 . 3 0 1 8 . 4 0 m a x . 3 3 0 2 . 0 0 a d o - 2 1 4 a c ( s m a ) d o - 2 1 4 a c ( s m a )
suggested p ad layout size (inch) 0.067 (mm) 1.70 2.50 1.50 0.098 0.059 4.00 0.157 e 6.50 0.256 a b c d d o -2 1 4 a c ( s m a ) standard packaging c a s e t y p e 5 , 0 0 0 r e e l ( p c s ) reel size (inch) 1 3 r e e l p a c k d o - 2 1 4 a c ( s m a ) 1.the pad layout is for reference purposes only . note: aqw -jb009 page 4 rev : a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. smd schottky barrier diode marking code c xxx comchip logo pkg sma smb smc a b c product type marking code package : oo x x schottky diode special code blank l ll oo sl others low vf ultra low vf super low vf b cathod band xxx = product type marking code part number marking code ACDBA340-HF 340 a b c e d
|
